Polarization properties of praseodymium-modified SrBi2Ta2O9 ceramics and thin films prepared by sol-gel method

被引：18
|
作者：
Kitamura, A
Noguchi, Y
Miyayama, M
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Japan Sci & Technol Corp, JST, PRESTO, Kawaguchi, Saitama 332012, Japan
来源：
MATERIALS LETTERS | 2004年 / 58卷 / 11期
关键词：
ferroelectrics; perovskites; defects; SrBi2Ta2O9;
D O I：
10.1016/j.matlet.2003.11.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pr0.14Sr0.8Bi2.1Ta2O9 (Pr-SBT) thin films were prepared by sol-gel method, and the polarization properties were measured and compared with that of Pr-SBT ceramics. The Rietveld analysis of powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) revealed that praseodymium ions are substituted at the Sr site as Pr3+ with Sr vacancies. While Pr-SBT ceramics showed a remanent polarization (2P(r)) of 21 muC/cm(2), the 2P(r) of Pr-SBT thin films with the thickness of 280 nm was 15 muC/cm(2). The value of coercive voltage (2V(c)) of the films was 1.4 V (coercive field, 2E(c) was 52 kV/cm), which was lower that that of SBT thin films. It is shown that Pr-SBT is a promising candidate material for low-voltage operating ferroelectric memories. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：1815 / 1818
页数：4
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