Microstructure and microwave dielectric properties of Bi12SiO20 ceramics

被引：14

作者：

Jeong, Byoung-Jik ^{[1
]}

Joung, Mi-Ri ^{[1
]}

Kweon, Sang-Hyo ^{[1
]}

Kim, Jin-Seong ^{[1
]}

Nahm, Sahn ^{[1
]}

Choi, Ji-Won ^{[2
]}

Hwang, Seong-Ju ^{[3
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[2] KIST, Ctr Elect Mat, Seoul 137791, South Korea

[3] Ewha Womans Univ, Dept Chem & Nano Sci, Ctr Intelligent Nanobio Mat, Seoul 120750, South Korea

来源：

MATERIALS RESEARCH BULLETIN | 2012年 / 47卷 / 12期

关键词：

Ceramics; Oxides; Dielectric properties; Microstructure; GLASSES; B2O3; SI;

D O I：

10.1016/j.materresbull.2012.08.075

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi12SiO20 ceramics were well sintered at 800 degrees C after calcination at 700 degrees C. A liquid phase of composition Bi2O3 was formed during the sintering at temperatures >= 800 degrees C and assisted the densification of the Bi12SiO20 ceramics. When the sintering temperature exceeded 800 degrees C, however, the relative density, epsilon(r), and Q x f values of the Bi12SiO20 ceramics decreased, probably due to the formation of a large amount of the liquid phase. The Bi12SiO20 ceramics sintered at 800 degrees C for 5.0 h exhibited excellent microwave dielectric properties with a high epsilon(r) of 43, a high Q x f of 86,802 GHz and a small tau(f) of -10.39 ppm/degrees C. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：4510 / 4513

页数：4

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