Investigation of the morphology of porous silicon by Rutherford Backscattering Spectrometry

被引：12
|
作者：
Szilagyi, E
Hajnal, Z
Paszti, F
Buiu, O
Craciun, G
Cobianu, C
Savaniu, C
Vazsonyi, E
机构：
[1] KFKI, RES INST MAT SCI, H-1525 BUDAPEST, HUNGARY
[2] INST MICROTECHNOL, RO-72225 BUCHAREST, ROMANIA
来源：
MATERIALS SCIENCE APPLICATIONS OF ION BEAM TECHNIQUES | 1997年 / 248-2卷
关键词：
ion beam analysis; Rutherford Backscattering Spectrometry; morphology;
D O I：
10.4028/www.scientific.net/MSF.248-249.373
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The pore walls of a porous Si sample of columnar type were coated by SnO2 using the sol-gel technique. The sample was characterised by Rutherford Backscattering Spectrometry (RBS). The Sn signal in the RBS spectra revealed that the coating was homogeneous in depth. The low energy edge and the total width of the Sn peak showed significant variations with sample tilt angle yielding information on the 3D morphology of the porous layer. These effects could be simulated by Monte Carlo type calculations of RBS measurements on 3D structures.
引用
收藏
页码：373 / 376
页数：4
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