An Analog Memristive and Memcapacitive Device for Neuromorphic Computing

被引：2
|
作者：
Mgeladze, Eter [1 ]
Herzig, Melanie [1 ]
Schroedter, Richard [2 ]
Tetzlaff, Ronald [2 ]
Mikolajick, Thomas [1 ,3 ]
Slesazeck, Stefan [1 ]
机构：
[1] Namlab gGmbH, Dresden, Germany
[2] Tech Univ Dresden, Chair Fundamentals Elect Engn, Dresden, Germany
[3] Tech Univ Dresden, Chair Nanoelect, Dresden, Germany
来源：
2022 29TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (IEEE ICECS 2022) | 2022年
关键词：
Interfacial; gradual and analog switching in Al2O3/NbOx; bi-layer stack; forming free; memristance; memcapacitance; potentiation; depression; STP;
D O I：
10.1109/ICECS202256217.2022.9970915
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A NbOx and Al2O3 bilayer metal-insulator-metal structure features capacitive state change together with gradual, non-filamentary resistive switching. The reported device offers several benefits, including no need for electroforming and intrinsic current compliance. These features are highly attractive for neuromorphic computing applications, where biological plasticity can be emulated by not only memristance but also memcapacitance of the device. To investigate the capability of a Ti/Al2O3/NbOx/Ti stack to produce the behavior necessary for mimicking the functionality of neurons or synapses, its dynamic response is studied in detail by means of pulsed I-V and C-V measurements. Additionally, the correlation between the capacitive and the memristive state change in the stack is discussed.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Memristive Memory Enhancement by Device Miniaturization for Neuromorphic Computing
    Goossens, Anouk S.
    Ahmadi, Majid
    Gupta, Divyanshu
    Bhaduri, Ishitro
    Kooi, Bart J.
    Banerjee, Tamalika
    ADVANCED ELECTRONIC MATERIALS, 2023, 9 (04):
  • [2] LiSiOX-Based Analog Memristive Synapse for Neuromorphic Computing
    Chen, Jia
    Lin, Chih-Yang
    Li, Yi
    Qin, Chao
    Lu, Ke
    Wang, Jie-Ming
    Chen, Chun-Kuei
    He, Yu-Hui
    Chang, Ting-Chang
    Sze, Simon M.
    Miao, Xiang-Shui
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (04) : 542 - 545
  • [3] Mitigating Nonlinear Effect of Memristive Synaptic Device for Neuromorphic Computing
    Fu, Jingyan
    Liao, Zhiheng
    Gong, Na
    Wang, Jinhui
    IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, 2019, 9 (02) : 377 - 387
  • [4] Neuromorphic computing with memristive devices
    Wen Ma
    Mohammed A. Zidan
    Wei D. Lu
    Science China Information Sciences, 2018, 61
  • [5] Neuromorphic computing with memristive devices
    Wen MA
    Mohammed A.ZIDAN
    Wei D.LU
    Science China(Information Sciences), 2018, 61 (06) : 136 - 144
  • [6] A memristive diode for neuromorphic computing
    Wang, Xiaolei
    Shao, Qi
    Ku, Pui Sze
    Ruotolo, Antonio
    MICROELECTRONIC ENGINEERING, 2015, 138 : 7 - 11
  • [7] Neuromorphic computing with memristive devices
    Ma, Wen
    Zidan, Mohammed A.
    Lu, Wei D.
    SCIENCE CHINA-INFORMATION SCIENCES, 2018, 61 (06)
  • [8] MemFlash device: floating gate transistors as memristive devices for neuromorphic computing
    Riggert, C.
    Ziegler, M.
    Schroeder, D.
    Krautschneider, W. H.
    Kohlstedt, H.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (10)
  • [9] An Interface-Type Memristive Device for Artificial Synapse and Neuromorphic Computing
    Kunwar, Sundar
    Jernigan, Zachary
    Hughes, Zach
    Somodi, Chase
    Saccone, Michael D. D.
    Caravelli, Francesco
    Roy, Pinku
    Zhang, Di
    Wang, Haiyan
    Jia, Quanxi
    MacManus-Driscoll, Judith L. L.
    Kenyon, Garrett
    Sornborger, Andrew
    Nie, Wanyi
    Chen, Aiping
    ADVANCED INTELLIGENT SYSTEMS, 2023, 5 (08)
  • [10] ZnSnOy/ZnSnOx Bilayer Transparent Memristive Synaptic Device for Neuromorphic Computing
    Kumar, Dayanand
    Saleem, Aftab
    Keong, Lai Boon
    Singh, Amit
    Wang, Yeong Her
    Tseng, Tseung-Yuen
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (08) : 1211 - 1214
12345