An Analog Memristive and Memcapacitive Device for Neuromorphic Computing

被引：1
|
作者：
Mgeladze, Eter [1 ]
Herzig, Melanie [1 ]
Schroedter, Richard [2 ]
Tetzlaff, Ronald [2 ]
Mikolajick, Thomas [1 ,3 ]
Slesazeck, Stefan [1 ]
机构：
[1] Namlab gGmbH, Dresden, Germany
[2] Tech Univ Dresden, Chair Fundamentals Elect Engn, Dresden, Germany
[3] Tech Univ Dresden, Chair Nanoelect, Dresden, Germany
来源：
2022 29TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (IEEE ICECS 2022) | 2022年
关键词：
Interfacial; gradual and analog switching in Al2O3/NbOx; bi-layer stack; forming free; memristance; memcapacitance; potentiation; depression; STP;
D O I：
10.1109/ICECS202256217.2022.9970915
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A NbOx and Al2O3 bilayer metal-insulator-metal structure features capacitive state change together with gradual, non-filamentary resistive switching. The reported device offers several benefits, including no need for electroforming and intrinsic current compliance. These features are highly attractive for neuromorphic computing applications, where biological plasticity can be emulated by not only memristance but also memcapacitance of the device. To investigate the capability of a Ti/Al2O3/NbOx/Ti stack to produce the behavior necessary for mimicking the functionality of neurons or synapses, its dynamic response is studied in detail by means of pulsed I-V and C-V measurements. Additionally, the correlation between the capacitive and the memristive state change in the stack is discussed.
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页数：4
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