Spectroscopic properties and activated mechanism of NO on isolated cationic tantalum clusters: A first-principles study

被引:5
|
作者
Li, Xiaojun [1 ]
Tang, Yongqiang [2 ]
Li, Shuna [2 ]
Gui, Yangyang [2 ]
机构
[1] Xian Univ Posts & Telecommun, Sch Sci, Xian 710121, Shaanxi, Peoples R China
[2] Xian Univ, Sch Chem Engn, Xian, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
NO dissociation; Tantalum clusters; Electronic structure; Infrared spectra; DFT; DENSITY-FUNCTIONAL THEORY; NITROUS-OXIDE N2O; CATALYTIC-REDUCTION; ELECTRONIC-PROPERTIES; GLOBAL OPTIMIZATION; HYDROGEN-PRODUCTION; VANADIUM CLUSTERS; NITRIC-OXIDE; ADSORPTION; DISSOCIATION;
D O I
10.1016/j.saa.2019.03.052
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
The adsorption and dissociation of NO on the cationic Ta-15(+) clusterwere investigated using the density-functional theory (DFT) calculations, and the Ta-centered bicapped hexagonal antiprism (BHA) structure of cationic Ta-15(+) cluster can be identified as the globalminimum, which reproduces well the infraredmultiple photo dissociation (IR-MPD) spectrum. Our results show that the cationic BHA-Ta-15(+) cluster provides the hollow region for NO to interact effectively, and possess larger adsorption strength on the region than other sites. The density of states, charge density differences and frontier molecular orbitals were analyzed to understand the electronic properties of the stable NO-adsorbed isomers. The characteristic IR peaks of the firstly two low-lying isomers are properly assigned, in which the strongest IR peak originates from the N-O stretching vibration. For the dissociation of NO on the BHA-Ta-15(+) cluster, it is found that the reaction path II easily occurs rather than path I due to small reaction barrier, and the clustermay possess the great catalytic behavior to dissociate NO molecule. The present results will inevitably stimulate future theoretical and experimental studies for the design of novel Ta-based catalytic materials for the NO dissociation. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页码:335 / 341
页数:7
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