Modeling of Nonlinear Active Circuits Using FDTD Approach

被引：0
|
作者：
Farghadan, Iman [1 ]
Fayaz, Ahmad [1 ]
Darabi, Nima [2 ]
Svensson, Peter [2 ]
机构：
[1] KN Toosi Univ Technol, Dept Elect Engn, Tehran, Iran
[2] Norwegian Univ Sci & Technol, Ctr Quantifiable Qual Serv Commun Syst, Q2S, Trondheim, Norway
来源：
RECENT ADVANCES IN SYSTEMS ENGINEERING AND APPLIED MATHEMATICS | 2008年
关键词：
FDTD; MESFET; Large Signal; Microwave Amplifier; Intermodulation;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
This paper, describes a voltage- source formulation of the extended finite-difference time-domain algorithm for the purpose of modeling nonlinear microwave devices. Based on this approach, the device-wave interaction is characterized and incorporated into FDTD algorithm. Analysis of nonlinear properties, including harmonic generation and intermodulation, can be accomplished by using a large signal device circuit model. This technique is applied to the analysis of a typical nonlinear microwave amplifier, which includes a three-terminal active MESFET device. Simulation results are in good agreement with MICROWAVE OFFICE results.
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页码：102 / +
页数：2
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