Dielectric dispersion and antiferromagnetism in BiTbxFe1-xO3 (x=1.0, 0.75)

被引：0

作者：

Saha, Sujoy ^{[1
]}

Chanda, Sadhan ^{[1
]}

Dutta, Alo ^{[2
]}

Das, Dipankar ^{[3
]}

Sinha, T. P. ^{[1
]}

机构：

[1] Bose Inst, Dept Phys, Kolkata 700009, India

[2] SN Bose Natl Ctr Basic Sci, Dept Condensed Matter Phys & Mat Sci, Kolkata 700098, India

[3] Kolkata Ctr, UGC DAE Consortium Sci Res, Kolkata 700098, India

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2016年 / 398卷

关键词：

Rietveld refinement; Dielectric relaxation; Wel temperatures; RELAXATION;

D O I：

10.1016/j.jmmm.2015.09.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bismuth terbium oxide, BiTbO3 (BT) and bismuth terbium iron oxide, BiTb0.75Fe0.25O3 (BTF) are synthesized by the solid-state reaction technique. Rietveld refinement of the room temperature powder X-ray diffraction pattern of both BT and BTF confirms cubic phase with lattice parameter a=5.4451 (2) and 5.4896 (3) A respectively. Raman spectroscopy studies have been made to investigate vibrational Properties for both the samples. The dielectric relaxation behavior of the samples is investigated by alternating current impedance spectroscopy (ACIS) in the frequency range from 42 Hz to 1.10 MHz and in the temperature range from 303 to 673 K. The complex impedance plane plots and ac conductivity spectra reveal the presence of grain, grain-boundary and electrode effect in BT. Both BT and BTF are antiferromagnetic 41 nature with Neel temperature of 33.8 and 51.9 K respectively. (C) 2015 Elsevier B.V. All rights reserved

引用

页码：289 / 297

页数：9

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