Structural characterization of Er:YAG thin films grown by pulsed laser deposition

Thin films of erbium-doped yttrium aluminum garnet (Er:Y3Al5O12) were grown by pulsed laser deposition (PLD) followed by high temperature annealing. Such films are very appropriate for use in planar waveguide lasers and can be used in medical and telecommunication applications as well. Crystals of Y3Al15O12 doped with triple ionized ions of erbium are well-known laser materials that can emit in the infrared and visible range. PLD experiments were performed on Silicon (111) substrates in oxygen atmosphere in high vacuum chambers with a KrF excimer laser source (lambda=248 nm). We studied the depositions from single crystal Er:YAG targets. After deposition, some of the films were annealed, the temperature being gradually increased up to 1250 degrees C. The influence of growth and annealing conditions on the structural properties of the films was studied by X-ray diffraction.