Acoustic phonon scattering in silicon quantum dots

被引：0
|
作者：
Dür, M [1 ]
Gunther, AD [1 ]
Vasileska, D [1 ]
Goodnick, SM [1 ]
机构：
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
来源：
NANOTECHNOLOGY | 1999年 / 10卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Intravalley acoustic phonon scattering of electrons in fully quantized systems based on n-type inversion layers on a (100) surface of p-type Si is studied theoretically. The confining potential normal to the Si/SiO2 interface is modelled by a triangular quantum well. For the confinement in the lateral directions we assume a parabolic potential. The calculations reveal that the anisotropic electron-acoustic-phonon interaction strongly affects the scattering rate and the average scattering angle. The calculated transition rate of electrons from the first excited state to the ground state shows a strong dependence on spatial confinement and lattice temperature, with the longitudinal phonon mode giving the main contribution to the total rate.
引用
收藏
页码：142 / 146
页数：5
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