共 50 条
- [23] EPR AS ANTISITE PHOTOQUENCHING BEHAVIOR AND EL2 ATOMIC CONFIGURATION IN SEMI-INSULATING GAAS SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 387 - 390
- [24] Verification of EL2 electronic absorption effect on charge transfer in semi-insulating GaAs PHYSICAL REVIEW B, 1996, 53 (15): : 9809 - 9813
- [26] CHARACTERIZATION OF EL2 LEVEL IN SEMI-INSULATING GAAS BY ROOM-TEMPERATURE PHOTOLUMINESCENCE SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 571 - 576
- [28] Lattice relaxation and metastability of the EL2 defect in semi-insulating GaAs and low temperature GaAs 1600, Am Inst Phys, Woodbury, NY, USA (87):