1.3 mu m laser diodes with butt-jointed selectively grown spot-size converters uniformly fabricated on a 2in InP substrate

被引：6

作者：

Okamoto, H

Suzaki, Y

Tohmori, Y

Okamoto, M

Kondo, Y

Kadota, Y

Yamamoto, M

Kishi, K

Sakai, Y

Wada, M

Nakao, M

Itaya, Y

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 12期

关键词：

semiconductor junction lasers; semiconductor growth;

D O I：

10.1049/el:19960741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1.3 mu m laser diodes with butt-jointed selectively grown spot-size converters have been successfully fabricated on a 2in InP substrate. Their threshold current and far-field patterns were uniformly distributed over the 2in wafer. These uniform characteristics were obtained by combining uniform MOVPE growth, wet etching, and CH4/H-2 reactive ion etching.

引用

页码：1099 / 1101

页数：3

共 13 条

[1] Uniformity of 1.3-mu m laser diodes with Butt-jointed selectively grown spot-size converter fabricated on 2-inch InP substrates
Okamoto, H
Suzaki, Y
Tohmori, Y
Okamoto, M
Kondo, Y
Kadota, Y
Yamamoto, M
Kishi, K
Sakai, Y
Sugie, T
Itaya, Y
[J]. 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 267 - 270
[2] Narrow-beam 1.3 mu m superluminescent diode with butt-jointed selectively grown spot-size converter
Okamoto, H
Wada, M
Sakai, Y
Kawaguchi, Y
Kondo, Y
Kadota, Y
Kishi, K
Itaya, Y
[J]. ELECTRONICS LETTERS, 1997, 33 (06) : 528 - 529
[3] SPOT-SIZE CONVERTED 1.3-MU-M LASER WITH BUTT-JOINTED SELECTIVELY GROWN VERTICALLY TAPERED WAVE-GUIDE
TOHMORI, Y
SUZAKI, Y
FUKANO, H
OKAMOTO, M
SAKAI, Y
MITOMI, O
MATSUMOTO, S
YAMAMOTO, M
FUKUDA, M
WADA, M
ITAYA, Y
SUGIE, T
[J]. ELECTRONICS LETTERS, 1995, 31 (13) : 1069 - 1070
[4] Narrow beam 1.3 mu m superluminescent diode with butt-jointed selectively grown spot size converter
Okamoto, H
Wada, M
Sakai, Y
Kawaguchi, Y
Kondo, Y
Kadota, Y
Kishi, K
Itaya, Y
[J]. ELECTRONICS LETTERS, 1997, 33 (09) : 811 - 812
[5] High coupling efficiency and high responsivity 1.3 mu m light emission and detection diodes with a butt-jointed spot-size converter
Suzaki, Y
Matsumoto, S
Tohmori, Y
Kishi, K
Okamoto, M
Yamamoto, M
[J]. ELECTRONICS LETTERS, 1996, 32 (14) : 1318 - 1319
[6] 1.3 mu m laser diodes with spot-size converter for access networks
Yamamoto, M
Itaya, Y
Sugie, T
[J]. 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 376 - 379
[7] LASER-DIODES MONOLITHICALLY INTEGRATED WITH SPOT-SIZE CONVERTERS FABRICATED ON 2INCH INP SUBSTRATES
WADA, M
KOHTOKU, M
KAWANO, K
KONDO, S
TOHMORI, Y
KONDO, Y
KISHI, K
SAKAI, Y
KOTAKA, I
NOGUCHI, Y
ITAYA, Y
[J]. ELECTRONICS LETTERS, 1995, 31 (15) : 1252 - 1254
[8] HIGH-TEMPERATURE OPERATION WITH LOW-LOSS COUPLING TO FIBER FOR NARROW-BEAM 1.3-MU-M LASERS WITH BUTT-JOINTED SELECTIVE GROWN SPOT-SIZE CONVERTER
TOHMORI, Y
SUZAKI, Y
OOHASHI, H
SAKAI, Y
KONDO, Y
OKAMOTO, H
OKAMOTO, M
KADOTA, Y
MITOMI, O
ITAYA, Y
SUGIE, T
[J]. ELECTRONICS LETTERS, 1995, 31 (21) : 1838 - 1840
[9] 1.3-MU-M LARGE SPOT-SIZE LASER-DIODES WITH LATERALLY TAPERED ACTIVE LAYER
FUKANO, H
KADOTA, Y
KONDO, Y
UEKI, M
SAKAI, Y
KASAYA, K
YOKOYAMA, K
TOHMORI, Y
[J]. ELECTRONICS LETTERS, 1995, 31 (17) : 1439 - 1440
[10] HIGH-COUPLING-EFFICIENCY LASER-DIODES INTEGRATED WITH SPOT-SIZE CONVERTERS FABRICATED ON 2INCH INP SUBSTRATES
WADA, M
KOHTOKU, M
KAWANO, K
OKAMOTO, H
KADOTA, Y
KONDO, Y
KISHI, K
KONDO, S
SAKAI, Y
KOTAKA, I
NOGUCHI, Y
ITAYA, Y
[J]. ELECTRONICS LETTERS, 1995, 31 (24) : 2102 - 2104

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