Two-Photon Confocal Microscopy in the Study of the Volume Characteristics of Semiconductors

被引：5
|
作者：
Kalinushkin, V. P. [1 ]
Uvarov, O. V. [1 ]
机构：
[1] Russian Acad Sci, Prokhorov Gen Phys Inst, Ul Vavilova 38, Moscow 119991, Russia
来源：
TECHNICAL PHYSICS | 2016年 / 61卷 / 12期
关键词：
D O I：
10.1134/S1063784216120203
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Zn-Se crystals are used to analyze prospects for application of two-photon confocal microscopy in the study of plane and volume interband and impurity luminescence in semiconductors. Such maps can be formed with a depth step and planar spatial resolution of several micrometers at distances of up to 1 mm from the surface. The method is used to detect luminescence-active inhomogeneities in crystals and study their structure and luminescence characteristics. Prospects for the application of the two-photon confocal microscopy in the study of direct-band-semiconductors and materials of the fourth group are discussed.
引用
收藏
页码：1876 / 1879
页数：4
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