A failure analysis framework of ReRAM In-Memory Logic operations

Computation-in-Memory (CiM) with emerging nonvolatile memories leads to significant performance and energy emclency, whieh Is a promising approaeh to address so-called memorywallofconventional von Neumann architectures. Redoxbased Random. access memory (ReRAM) is an appropriate candidate for the realization of CiM coneepls in CMOS cointegrated crossbar structures. However, ReRAMdevices sufl'er from. inherent variability in fabrication and operation. In this paper, we propose a sta1istical failure probability framework for the reliability evaluation of ReRAM-based CiM. Based on thls, a comprebensive reliability anaIysi is Is performed for logic operations in ReRAM-based Scouting and MAGIC concepts at the crossbar level. Our proposed framework shows that existing logic operation in the crossbar architecture bas a high failnre probability due to the variability and crossbar non-idealities. Hence, a modified crossbar design is proposed to achieve the target reliability requirements.