3D Hall probe integrated in 0.35 μm CMOS technology for magnetic field pulses measurements

被引：7

作者：

Pascal, Joris ^{[1
]}

Hebrard, Luc ^{[1
]}

Frick, Vincent ^{[1
]}

Blonde, Jean-Philippe ^{[1
]}

机构：

[1] ULP Strasbourg, InESS, CNRS, UMR7163, F-67037 Strasbourg, France

来源：

2008 JOINT IEEE NORTH-EAST WORKSHOP ON CIRCUITS AND SYSTEMS AND TAISA CONFERENCE | 2008年

关键词：

D O I：

10.1109/NEWCAS.2008.4606330

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a 3 dimensional magnetometer based on Hall effect sensors integrated without any post processing in a standard low cost 0.35 mu m CMOS technology. The system is dedicated to magnetic pulses measurements under a strong static field. Two vertical Hall devices (VHD) are sensitive to the components of the magnetic field oriented in the plane of the chip, while a horizontal Hall device (HHD) is sensitive to the component of the magnetic field orthogonally oriented to the plane of the chip. 3 identical instrumental chains are integrated to perform amplification of the 3 Hall voltages. The system implements a compensation of the static magnetic field and allows to measure magnetic fields pulses with a resolution of 79 mu T over a [5 Hz - 1.6 kHz] bandwidth. Pulses are in the range from hundreds of mu T to tens of mT in the frequency range from 1 Hz; to 10 kHz. The static field is compensated up to 1.5 T. The spatial resolution is 44 Am. The system power consumption has been optimized to 15 mW.

引用

页码：97 / 100

页数：4

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