Nanostructured Bilayer Anodic TiO2/Al2O3 Metal-Insulator-Metal Capacitor

被引：6
|
作者：
Karthik, R. [1 ]
Kannadassan, D. [1 ]
Baghini, Maryam Shojaei [2 ]
Mallick, P. S. [1 ]
机构：
[1] Vellore Inst Technol, Sch Elect Engn, Vellore 14, Tamil Nadu, India
[2] Indian Inst Technol, Dept Elect Engn, Mumbai 76, Maharashtra, India
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2013年 / 13卷 / 10期
关键词：
Metal-Insulator-Metal Capacitor; Anodization; Leakage Mechanisms; Bilayer; Crystalline Properties; VOLTAGE;
D O I：
10.1166/jnn.2013.7767
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
This paper presents the fabrication of high performance bilayer TiO2/Al2O3 Metal-Insulator-Metal capacitor using anodization technique. A high capacitance density of 7 fF/mu m(2), low quadratic voltage coefficient of capacitance of 150 ppm/V-2 and a low leakage current density of 9.1 nA/cm(2) at 3 V are achieved which are suitable for Analog and Mixed signal applications. The influence of anodization voltage on structural and electrical properties of dielectric stack is studied in detail. At higher anodization voltages, we have observed the transformation of amorphous to crystalline state of TiO2/Al2O3 and improvement of electrical properties.
引用
收藏
页码：6894 / 6899
页数：6
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