Photoinduced degradation of α-Si:H/μc-Si:H tandem photoconvertes at elevated temperatures

Photoinduced degradation of tandem photoconverters with the structure alpha-Si:H/mu c-Si:H and initial efficiency of 10.5% at temperatures of 298, 328, and 353 K is experimentally studied. It has been found that, at a temperature of 298 K, the efficiency of the photoconverters decreases by 1.0-1.2% during long light exposure, while an increase in temperature to 328 K leads to a decrease in efficiency to 0.2%; at a temperature of 353 K, no degradation is observed. To explain these results, a modified H-collision model was used. Thermal-activation energy has been determined for the process that hampers the growth of dangling (ruptured) bonds in the i-alpha-Si:H layer.