Impact of in-situ TRL Reference Impedance Determination on Parameter Extraction

被引：0

作者：

Rumiantsev, Andrej ^{[1
]}

Doerner, Ralf ^{[2
]}

Lenk, Friedrich ^{[3
]}

机构：

[1] Cascade Microtech GmbH, Sacka, Germany

[2] Ferdinand Braun Inst FBH, Berlin, Germany

[3] Hochschule Lausitz FH, Senftenburg, Germany

来源：

2012 42ND EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2012年

关键词：

component; S-parameter; calibration; on-wafer measurements; HBT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the impact of possible parameter extraction errors caused by inaccurate definition of the calibration reference impedance of in-situ multiline TRL. Two calibration sets implemented on GaAs and Si/SiGe: C wafer processes were quantitatively analyzed. Obtained results demonstrated that for most practical cases, the desired 5%-level of confidence of extracted parameters of high-reflective devices can easily be achieved without additional efforts. Thus, implementation of the in-situ TRL into a characterization workflow of high-performance microwave devices can be significantly simplified.

引用

页码：593 / 596

页数：4

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