Fe impurity-induced electronic states at the GaAs(110) surface

被引：6

作者：

Muehlenberend, Svenja ^{[1
]}

Gruyters, Markus ^{[1
]}

Berndt, Richard ^{[1
]}

机构：

[1] Univ Kiel, Inst Expt & Angew Phys, D-24098 Kiel, Germany

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 11期

关键词：

SEMICONDUCTORS; GAAS; MN;

D O I：

10.1103/PhysRevB.88.115301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic properties of single Fe atoms in the surface of p-type GaAs(110) are investigated by scanning tunneling microscopy (STM) and spectroscopy. In STM images, Fe atoms show a characteristic structure with an orientation that matches the GaAs substrate lattice. Fe is assumed to occupy substitutional sites in the surface. Spectra of the differential conductance on Fe reveal several distinct peaks. They are discussed in the context of electronic states that originate from hybridization between d orbitals of the Fe atom and p-like orbitals of neighboring As atoms.

引用

页数：6

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