Photoluminescence of Ge nanostructures grown by gas source molecular beam epitaxy on silicon (118) surface

被引：0

作者：

Serpentini, M ^{[1
]}

Souifi, A ^{[1
]}

Abdallah, M ^{[1
]}

Berbezier, I ^{[1
]}

Bremond, G ^{[1
]}

机构：

[1] Inst Natl Sci Appl Lyon, CNRS, UMR 5511, Phys Mat Lab, F-69621 Villeurbanne, France

来源：

LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS | 1999年 / 77卷

关键词：

photoluminescence; Ge island; type-II interface;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a photoluminescence (PL) study of Si/Ge/SiGe/Si structures grown by gas source molecular beam epitaxy on an (1 1 8) undulated surface with various Ge coverage. Nucleation and growth of Ge films is obtained by the Stranski-Krastanov mechanism. The influence of the substrate orientation on the changeover 2D-3D growth mode is investigated. Furthermore, we show the use of growing an SiGe wetting layer to control the uniformity of the Ge island size. The PL signal related to the Ge islands is found to be highly dependent of the power excitation and is observed up to room temperature. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：515 / 518

页数：4

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