Spin-to-charge conversion for hot photoexcited electrons in germanium

被引:22
|
作者
Zucchetti, C. [1 ]
Bottegoni, F. [1 ]
Isella, G. [1 ]
Finazzi, M. [1 ]
Rortais, F. [2 ]
Vergnaud, C. [2 ]
Widiez, J. [3 ]
Jamet, M. [2 ]
Ciccacci, F. [1 ]
机构
[1] Politecn Milan, Dipartimento Fis, LNESS, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy
[2] Univ Grenoble Alpes, CEA, CNRS, Grenoble INP,INAC Spintec, F-38000 Grenoble, France
[3] Univ Grenoble Alpes, CEA, LETI, DCOS,LIFT, F-38000 Grenoble, France
关键词
SEMICONDUCTOR SPINTRONICS; GENERATION; GAAS;
D O I
10.1103/PhysRevB.97.125203
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the spin-to-charge conversion in highly doped germanium as a function of the kinetic energy of the carriers. Spin-polarized electrons are optically generated in the Ge conduction band, and their kinetic energy is varied by changing the photon energy in the 0.7-2.2 eV range. The spin detection scheme relies on spin-dependent scattering inside Ge, which yields an inverse spin-Hall electromotive force. The detected signal shows a sign inversion for h(v) approximate to 1 eV which can be related to an interplay between the spin relaxation of high-energy electrons photoexcited from the heavy-hole and light-hole bands and that of low-energy electrons promoted from the split-off band. The inferred spin-Hall angle increases by about 3 orders of magnitude within the analyzed photon energy range. Since, for increasing photon energies, the phonon contribution to spin scattering exceeds that of impurities, our result indicates that the spin-to-charge conversion mediated by phonons is much more efficient than the one mediated by impurities.
引用
收藏
页数:7
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