Nonpolar electrical switching behavior in Cu-Si(Cu)Ox-Pt stacks

被引：6
|
作者：
Huang, Jian-Shiou [1 ]
Chen, Li-Ming [1 ]
Lin, Ting-Yi [1 ]
Lee, Chi-Young [1 ]
Chin, Tsung-Shune [1 ,2 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan
[2] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 40724, Taiwan
来源：
THIN SOLID FILMS | 2013年 / 544卷
关键词：
Resistive switching; SiOx; Nonpolar switching; Cu-doping; RRAM; FILMS; CU; TI;
D O I：
10.1016/j.tsf.2013.04.050
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrical switching of resistive memory is highly interface-dependent. We studied such a switching of Cu-doped amorphous SiOx thin-films in a sandwich stack Cu/Si(Cu)O-x/Pt. The stacks were prepared using radio frequency sputtering except Cu co-doping which utilized direct current (DC) power from 2 W to 15 W. We characterized electrical switching behavior by a Keithley 4200 semiconductor analyzer. Cu/Si(Cu)O-x/Pt devices with Cu-doping at DC-sputtering 2 W exhibit the best switching performance showing reproducible forming-free and non-polar switching. The endurance is more than 10(2) cycles, electrical resistance ratio more than 10, and operating voltages as low as: +/- 0.75 V for SET and +/- 0.45 V for RESET. The switching mechanism of Cu/Si(Cu)O-x/Pt stacks is explained based on both filamentary conduction and diffusion of Cu ions/atoms in SiOx. Both 'temperature coefficient of electrical resistance' and 'bonding status' at different depth-profiles as analyzed by using X-ray photoelectron spectroscopy provide robust evidences of the mechanisms. Cu-doped amorphous SiOx thin-films are thus potential for resistive memory. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码：134 / 138
页数：5
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