Nonpolar electrical switching behavior in Cu-Si(Cu)Ox-Pt stacks

Electrical switching of resistive memory is highly interface-dependent. We studied such a switching of Cu-doped amorphous SiOx thin-films in a sandwich stack Cu/Si(Cu)O-x/Pt. The stacks were prepared using radio frequency sputtering except Cu co-doping which utilized direct current (DC) power from 2 W to 15 W. We characterized electrical switching behavior by a Keithley 4200 semiconductor analyzer. Cu/Si(Cu)O-x/Pt devices with Cu-doping at DC-sputtering 2 W exhibit the best switching performance showing reproducible forming-free and non-polar switching. The endurance is more than 10(2) cycles, electrical resistance ratio more than 10, and operating voltages as low as: +/- 0.75 V for SET and +/- 0.45 V for RESET. The switching mechanism of Cu/Si(Cu)O-x/Pt stacks is explained based on both filamentary conduction and diffusion of Cu ions/atoms in SiOx. Both 'temperature coefficient of electrical resistance' and 'bonding status' at different depth-profiles as analyzed by using X-ray photoelectron spectroscopy provide robust evidences of the mechanisms. Cu-doped amorphous SiOx thin-films are thus potential for resistive memory. (C) 2013 Elsevier B. V. All rights reserved.