In-situ Observation and Characterization of Structural Evolution in a Phase-Change Memory Device by TEM-STM

被引：0
|
作者：
Cha, Dongkyu [1 ]
Park, S. Y. [1 ]
Ahn, Su Jin [2 ]
Horii, H. [2 ]
Kim, D. H. [2 ]
Kim, Y. K. [2 ]
Park, S. O. [2 ]
Jung, U. In [2 ]
Kim, Moon J. [1 ]
Kim, Jiyoung [1 ]
机构：
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
[2] Samsung Elect Co, Memory Div, Hwasung 445701, South Korea
来源：
MICROSCOPY AND MICROANALYSIS | 2009年 / 15卷
关键词：
D O I：
10.1017/S1431927609097694
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：716 / 717
页数：2
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