Microstructure characterization, phase transition, and device application of phase-change memory materials

被引:8
|
作者
Jiang, Kai [1 ,2 ]
Li, Shubing [2 ]
Chen, Fangfang [1 ]
Zhu, Liping [3 ,4 ]
Li, Wenwu [2 ,5 ]
机构
[1] Shanghai Dianji Univ, Sch Arts & Sci, Shanghai 200240, Peoples R China
[2] East China Normal Univ, Dept Phys, Shanghai, Peoples R China
[3] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[4] Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Dept Phys, Shanghai 200433, Peoples R China
[5] Fudan Univ, Inst Optoelect, Dept Mat Sci, Shanghai Frontiers Sci Res Base Intelligent Optoel, Shanghai, Peoples R China
基金
中国国家自然科学基金;
关键词
Phase-change memory; structural regulation; in-situ characterization; flexible devices; DESIGN; SWITCH;
D O I
10.1080/14686996.2023.2252725
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Phase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation.
引用
收藏
页数:15
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