Microstructure characterization, phase transition, and device application of phase-change memory materials

被引:8
|
作者
Jiang, Kai [1 ,2 ]
Li, Shubing [2 ]
Chen, Fangfang [1 ]
Zhu, Liping [3 ,4 ]
Li, Wenwu [2 ,5 ]
机构
[1] Shanghai Dianji Univ, Sch Arts & Sci, Shanghai 200240, Peoples R China
[2] East China Normal Univ, Dept Phys, Shanghai, Peoples R China
[3] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[4] Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Dept Phys, Shanghai 200433, Peoples R China
[5] Fudan Univ, Inst Optoelect, Dept Mat Sci, Shanghai Frontiers Sci Res Base Intelligent Optoel, Shanghai, Peoples R China
基金
中国国家自然科学基金;
关键词
Phase-change memory; structural regulation; in-situ characterization; flexible devices; DESIGN; SWITCH;
D O I
10.1080/14686996.2023.2252725
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Phase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation.
引用
收藏
页数:15
相关论文
共 50 条
  • [31] Recipe for ultrafast and persistent phase-change memory materials
    Ding, Keyuan
    Chen, Bin
    Chen, Yimin
    Wang, Junqiang
    Shen, Xiang
    Rao, Feng
    NPG ASIA MATERIALS, 2020, 12 (01)
  • [32] Materials for phase-change memory with elevated temperature stability
    Kao, Kin-Fu
    Chu, Yung-Ching
    Tsai, Ming-Jinn
    Chin, Tsung-Shune
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (10)
  • [33] Metavalent Bonding in Layered Phase-Change Memory Materials
    Zhang, Wei
    Zhang, Hangming
    Sun, Suyang
    Wang, Xiaozhe
    Lu, Zhewen
    Wang, Jiang-Jing
    Wang, Jiang-Jing
    Jia, Chunlin
    Schoen, Carl-Friedrich
    Mazzarello, Riccardo
    Ma, En
    Wuttig, Matthias
    ADVANCED SCIENCE, 2023, 10 (15)
  • [34] Recipe for ultrafast and persistent phase-change memory materials
    Keyuan Ding
    Bin Chen
    Yimin Chen
    Junqiang Wang
    Xiang Shen
    Feng Rao
    NPG Asia Materials, 2020, 12
  • [35] Nanoarchitectonics of binary semiconductor Sb-Y for the application of phase-change memory device
    Xu, Shengqing
    Wu, Weihua
    Zhou, Xiaochen
    Gu, Han
    Zhu, Xiaoqin
    Zhai, Jiwei
    Song, Sannian
    Song, Zhitang
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2023, 129 (11):
  • [36] Binary semiconductor In2Te3 for the application of phase-change memory device
    Hao Zhu
    Kai Chen
    Zhongyang Ge
    Hanni Xu
    Yi Su
    Jiang Yin
    Yidong Xia
    Zhiguo Liu
    Journal of Materials Science, 2010, 45 : 3569 - 3574
  • [37] Binary semiconductor In2Te3 for the application of phase-change memory device
    Zhu, Hao
    Chen, Kai
    Ge, Zhongyang
    Xu, Hanni
    Su, Yi
    Yin, Jiang
    Xia, Yidong
    Liu, Zhiguo
    JOURNAL OF MATERIALS SCIENCE, 2010, 45 (13) : 3569 - 3574
  • [38] DATA RETENTION CHARACTERIZATION OF PHASE-CHANGE MEMORY ARRAYS
    Gleixner, B.
    Pirovano, A.
    Sarkar, J.
    Ottogalli, F.
    Tortorelli, E.
    Tosi, M.
    Bez, R.
    2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, : 542 - +
  • [39] Associative Memory Function Found on Phase-Change Nanoscale Device
    Wang, Lei
    Gong, Si-Di
    Yang, Ci-Hui
    Peng, Yuan-Xiu
    Gai, Shan
    CURRENT NANOSCIENCE, 2015, 11 (06) : 797 - 804
  • [40] Microthermal Stage for Electrothermal Characterization of Phase-Change Memory
    Lee, Jaeho
    Kim, SangBum
    Jeyasingh, Rakesh
    Asheghi, Mehdi
    Wong, H. -S. Philip
    Goodson, Kenneth E.
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (07) : 952 - 954