All-Semiconductor Photonic Crystal Surface-Emitting Lasers Based on Epitaxial Regrowth

被引：21
|
作者：
Taylor, Richard J. E. [1 ]
Williams, David M. [1 ]
Childs, D. T. D. [1 ]
Stevens, Ben J. [1 ]
Shepherd, Luke R. [1 ,2 ]
Khamas, Salam [1 ]
Groom, Kristian M. [1 ]
Hogg, Richard A. [1 ]
Ikeda, Naoki [3 ]
Sugimoto, Yoshimasa [3 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Ctr Nanosci & Technol, Sheffield S3 7HQ, S Yorkshire, England
[2] Agcy Technol Sci & Res A Star, Singapore 138632, Singapore
[3] Natl Inst Mat Sci, Nanotechnol Innovat Ctr, Ibaraki 3050047, Japan
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2013年 / 19卷 / 04期
基金：
英国工程与自然科学研究理事会;
关键词：
Nanophotonics; photonic crystals; semiconductor growth; semiconductor lasers; BAND-STRUCTURE; CONFINEMENT;
D O I：
10.1109/JSTQE.2013.2249293
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The realization of all-semiconductor epitaxially regrown photonic crystal (PC) surface-emitting lasers is reported. PC coupling strengths, band structure, optimization of epitaxial regrowth, and operating characteristics are discussed. Room temperature operation allows agreement between theoretical and experimental band structure to be confirmed.
引用
收藏
页数：7
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