Electrochemical etching used on UHV CVD epitaxial thin films

被引：0

作者：

Jia, HY ^{[1
]}

Jin, XJ ^{[1
]}

Zhang, JS ^{[1
]}

Chen, PY ^{[1
]}

Tsien, PS ^{[1
]}

机构：

[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICSICT.1998.785822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra High Vacuum Chemical Vapor Deposition (UHV/CVD) is carried out to deposit silicon. The deposition is carried cut in the temperature scope of 550 to 800 degrees C. Electrochemical etching is used to test the defects in epitaxial films. Two different ways of etching were performed to validate the thin film etching,. The results is, almost the same. The defects are visible by the microscope at about 600 (x). It is found that the film quality is good in two extreme temperature scopes, i.e. 500 to 700 degrees C and above 750 degrees C, which was also observed by other authors. The defect density is estimated to be in the order of 10(6) to 10(8) cm(-2), including line defects, even micro defects because of the poor environment cleanliness.

引用

页码：135 / 138

页数：4

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