We establish that strong Fermi surface nesting drives the Neel transition in the RNi2Ge2 compounds. Generalized susceptibility, chi(0)(q), calculations found nesting to be responsible for both incommensurate wave vector, (0 0 0.793), in GdNi2Ge2, and the commensurate structure, (0 0 1), in EuNi2Ge2, as revealed by x-ray resonant exchange scattering. A continuous transition from incommensurate to commensurate magnetic structures via band filling is predicted. The surprisingly higher T-N in EuNi2Ge2 than that in GdNi2Ge2 is also explained.
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Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Lee, Dohyun
Lee, Sang Sun
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Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Lee, Sang Sun
Kim, Wondong
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Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Kim, Wondong
Hwang, Chanyong
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Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Hwang, Chanyong
Hossain, M. B.
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Chungnam Natl Univ, Sch Nano Sci & Technol, Dept Nano Informat Syst Engn, Taejon 305764, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Hossain, M. B.
Le Hung, Ngyuen
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Chungnam Natl Univ, Sch Nano Sci & Technol, Dept Nano Informat Syst Engn, Taejon 305764, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Le Hung, Ngyuen
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Kim, Hyojin
Kim, C. G.
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Chungnam Natl Univ, Sch Nano Sci & Technol, Dept Nano Informat Syst Engn, Taejon 305764, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Kim, C. G.
Lee, Hangil
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Pohang Univ Sci & Technol, Pohang Accelerator Lab, Beamline Res Div, Pohang 790784, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Lee, Hangil
Hwang, Han Na
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Pohang Univ Sci & Technol, Pohang Accelerator Lab, Beamline Res Div, Pohang 790784, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Hwang, Han Na
Hwang, Chan-Cuk
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Pohang Univ Sci & Technol, Pohang Accelerator Lab, Beamline Res Div, Pohang 790784, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Hwang, Chan-Cuk
Lee, Tae-Yon
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Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Lee, Tae-Yon
Kang, Younseon
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Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Kang, Younseon
Kim, Cheolkyu
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Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Kim, Cheolkyu
Suh, Dong-Seok
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Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea
Suh, Dong-Seok
Kim, Kijoon H. P.
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Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South KoreaKorea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea