Features of the Electronic Structure of the Bi2Se3 Topological Insulator Digitally Doped with 3d Transition Metals

被引:6
|
作者
Kulatov, E. T. [1 ]
Men'shov, V. N. [3 ]
Tugushev, V. V. [2 ]
Uspenskii, Yu. A. [2 ]
机构
[1] Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia
[2] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia
[3] DIPC, San Sebastian 20018, Basque Country, Spain
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/S0021364019020097
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electronic and optical spectra of the Bi3Se2 topological insulator digitally doped with V, Cr, Mn, Fe, and Co atoms are calculated using density functional theory. It is shown that the introduction of magnetic atoms into separate delta layers (one per 2-9 Bi2Se3 quintuple layers) multiply enhances magnetic effects. A special emphasis is put on Mn doping, which gives rise to the ferromagnetic spin ordering. The sensitivity of the spin order to the concentration and location of magnetic atoms is revealed. The study of an analytical model describing the resonant scattering of electrons in Bi2Se3 by atomic layers of transition metals also suggests the existence of spin-polarized states within the Bi2Se3 band gap. Our ab initio calculations show that transitions between the nested branches of the electronic spectrum, which exist near the Fermi level, are responsible for features of the optical conductivity at (h) over bar omega approximate to 0.15-0.3 eV, the infrared plasmon, and the Kerr angle theta(K) > 12 degrees in the infrared spectral range.
引用
收藏
页码:102 / 108
页数:7
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