Properties of NiO sputtered thin films and modeling of their sensing mechanism under formaldehyde atmospheres

被引：60
|
作者：
Castro-Hurtado, I. [1 ,2 ]
Malagu, C. [3 ,4 ]
Morandi, S. [5 ,6 ]
Perez, N. [1 ,2 ]
Mandayo, G. G. [1 ,2 ]
Castano, E. [1 ,2 ]
机构：
[1] Univ Navarra, CEIT, San Sebastian 20018, Spain
[2] Univ Navarra, Tecnun, San Sebastian 20018, Spain
[3] Univ Ferrara, Dept Phys, I-44100 Ferrara, Italy
[4] IDASC Ist Acust & Sensorist OM Corbino, Corbino, Italy
[5] Univ Turin, Dipartimento Chim, Ctr Excellence, I-10125 Turin, Italy
[6] Univ Turin, NIS, Ctr Excellence, I-10125 Turin, Italy
来源：
ACTA MATERIALIA | 2013年 / 61卷 / 04期
关键词：
NiO; Surface barrier; Formaldehyde; Gas sensor; p-Type; GAS SENSOR; OPTICAL-PROPERTIES; OXYGEN; OXIDATION; BARRIER;
D O I：
10.1016/j.actamat.2012.10.024
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work the sensing mechanism of p-type semiconducting NiO thin films under the exposure to formaldehyde is explained. The influence of the sensing layer thickness and annealing treatment on the structural, optical and electrical properties of the samples is studied. The height of the potential barrier is estimated from temperature-stimulated conductance measurements. The potential barrier height is linked to oxygen ionosorption on the semiconductor surface. Furthermore, Fourier transform-IR analysis was carried out in order to determine the chemical reactions that govern the process of gas detection and the temperature range at which they occur. As a result of the study, it is possible to explain how the thickness and annealing treatment affect the sensing mechanism of the samples. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：1146 / 1153
页数：8
相关论文
共 50 条
  • [1] Preparation and gas-sensing properties of very thin sputtered NiO films
    Hotovy, Ivan
    Rehacek, Vlastimil
    Kemeny, Martin
    Ondrejka, Peter
    Kostic, Ivan
    Mikolasek, Miroslav
    Spiess, Lothar
    JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS, 2021, 72 (01): : 61 - 65
  • [2] H2S Sensing Properties of RF Sputtered NiO Thin Films
    Bagwaiya, Toshi
    Goyal, C. P.
    Bhattacharya, Shovit
    Ramgir, N. S.
    Bhattacharya, D.
    Koiry, S. P.
    Aswal, D. K.
    Gupta, S. K.
    SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B, 2014, 1591 : 938 - 940
  • [3] Gas sensing properties of NiO thin films
    Ohya, Y
    Kameshima, M
    Tanabe, T
    Ban, T
    Takahashi, Y
    JOURNAL OF MATERIALS SYNTHESIS AND PROCESSING, 1998, 6 (04) : 237 - 241
  • [4] Characterization of sputtered NiO thin films
    Chen, HL
    Lu, YM
    Hwang, WS
    SURFACE & COATINGS TECHNOLOGY, 2005, 198 (1-3): : 138 - 142
  • [5] Characterization and gas sensing properties of NiO thin films
    Hotovy, I
    Kremmer, J
    Huran, J
    Siciliano, P
    Capone, S
    Spiess, L
    SENSORS AND MICROSYSTEMS, PROCEEDINGS, 2004, : 185 - 190
  • [6] Structural, optical and electrical properties of sputtered NiO thin films for gas detection
    Predanocy, M.
    Hotovy, I.
    Caplovicova, M.
    APPLIED SURFACE SCIENCE, 2017, 395 : 208 - 213
  • [7] Structural and Morphological Properties of Sputtered NiO Thin Films at Various Sputtering Pressures
    Reddy, A. Mallikarjuna
    Reddy, Y. Ashok Kumar
    Reddy, A. Sivasankar
    Reddy, P. Sreedhara
    SOLID STATE PHYSICS, PTS 1 AND 2, 2012, 1447 : 619 - +
  • [8] Studies of influence of structural properties and thickness of NiO thin films on formaldehyde detection
    Castro-Hurtado, I.
    Herran, J.
    Mandayo, G. G.
    Castano, E.
    THIN SOLID FILMS, 2011, 520 (03) : 947 - 952
  • [9] Toxic Gases Detection by NiO Sputtered Thin Films
    Castro-Hurtado, I.
    Herran, J.
    Perez, N.
    Olaizola, S. M.
    Ga Mandayo, G.
    Castano, E.
    SENSOR LETTERS, 2011, 9 (01) : 64 - 68
  • [10] Sputtered NiO thin films for organic vapours testing
    Predanocy, M.
    Hotovy, I.
    Caplovicova, M.
    Rehacek, V.
    Kosc, I.
    Spiess, L.
    NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2012, : 291 - 294
12345