Anisotropy light extraction with high polarization ratio from photonic crystal fight-emitting diodes

被引：0
|
作者：
Lai, Chun-Feng [1 ,2 ]
Kuo, Hao-Chung [1 ,2 ]
Lu, Tien-Chang [1 ,2 ]
Wang, Shing-Chang [1 ,2 ]
Chao, C. H. [3 ]
Hsueh, H. T. [3 ]
Wang, J-F. T. [3 ]
Yeh, W. Y. [3 ]
Chi, J. Y. [3 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect Opt Engn, Hsinchu 300, Taiwan
[3] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 310, Taiwan
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The azimuthal anisotropy of GaN photonic crystal light-emitting diode is investigated using an annular structure. The extracted light distribution has P/S ratio of 5.5 for fight propagating in Gamma X direction and 2.1 for Gamma M direction. @2007 Optical Society of America
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页码：1019 / +
页数：2
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