Electrical and magnetic properties of the diluted magnetic semiconductors Cd1-xMnxGeP2 and Cd1-xMnxGeAs2 at high pressures

被引：3
|
作者：
Mollaev, A. Yu [1 ]
Kamilov, I. K. [1 ]
Arslanov, R. K. [1 ]
Novotortsev, V. M. [2 ]
Marenkin, S. F. [2 ]
Trukhan, V. M. [3 ]
Arslanov, T. R. [1 ]
Zalibekov, U. Z. [1 ]
Fedorchenko, I. V. [2 ]
机构：
[1] Russian Acad Sci, Amirkhanov Inst Phys, Dagestan Sci Ctr, Makhachkala 367003, Dagestan, Russia
[2] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia
[3] Belarussian Acad Sci, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS
来源：
INORGANIC MATERIALS | 2012年 / 48卷 / 09期
关键词：
T-C;
D O I：
10.1134/S0020168512090105
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structural and magnetic phase transitions and magnetoresistance of the diluted magnetic semiconductors Cd1 - x Mn (x) GeAs2 and Cd1 - x Mn (x) GeP2 have been studied at high hydrostatic pressures, up to 7 GPa. The normal and anomalous Hall coefficients of the samples have been determined graphically from experimental data.
引用
收藏
页码：872 / 876
页数：5
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