Electrical and magnetic properties of the diluted magnetic semiconductors Cd1-xMnxGeP2 and Cd1-xMnxGeAs2 at high pressures

被引：3
|
作者：
Mollaev, A. Yu [1 ]
Kamilov, I. K. [1 ]
Arslanov, R. K. [1 ]
Novotortsev, V. M. [2 ]
Marenkin, S. F. [2 ]
Trukhan, V. M. [3 ]
Arslanov, T. R. [1 ]
Zalibekov, U. Z. [1 ]
Fedorchenko, I. V. [2 ]
机构：
[1] Russian Acad Sci, Amirkhanov Inst Phys, Dagestan Sci Ctr, Makhachkala 367003, Dagestan, Russia
[2] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia
[3] Belarussian Acad Sci, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS
来源：
INORGANIC MATERIALS | 2012年 / 48卷 / 09期
关键词：
T-C;
D O I：
10.1134/S0020168512090105
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structural and magnetic phase transitions and magnetoresistance of the diluted magnetic semiconductors Cd1 - x Mn (x) GeAs2 and Cd1 - x Mn (x) GeP2 have been studied at high hydrostatic pressures, up to 7 GPa. The normal and anomalous Hall coefficients of the samples have been determined graphically from experimental data.
引用
收藏
页码：872 / 876
页数：5
相关论文
共 50 条
  • [1] Electrical and magnetic properties of the diluted magnetic semiconductors Cd1 − xMnxGeP2 and Cd1 − xMnxGeAs2 at high pressures
    A. Yu. Mollaev
    I. K. Kamilov
    R. K. Arslanov
    V. M. Novotortsev
    S. F. Marenkin
    V. M. Trukhan
    T. R. Arslanov
    U. Z. Zalibekov
    I. V. Fedorchenko
    Inorganic Materials, 2012, 48 : 872 - 876
  • [2] Homogeneous limit of Cd1-xMnxGeAs2 alloy: Electrical and magnetic properties
    Kilanski, L.
    Gorska, M.
    Dynowska, E.
    Podgorni, A.
    Avdonin, A.
    Dobrowolski, W.
    Fedorchenko, I. V.
    Marenkin, S. F.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (13)
  • [3] A new magnetic semiconductor Cd1-xMnxGeP2
    Medvedkin, GA
    Ishibashi, T
    Nishi, T
    Sato, K
    SEMICONDUCTORS, 2001, 35 (03) : 291 - 294
  • [4] Room temperature ferromagnetism in novel diluted magnetic semiconductor Cd1-xMnxGeP2
    Medvedkin, Gennadiy A.
    Ishibashi, Takayuki
    Nishi, Takao
    Hayata, Koji
    Hasegawa, Yoichi
    Sato, Katsuaki
    Japanese journal of applied physics, 2000, 39 (10 A)
  • [5] Room temperature ferromagnetism in novel diluted magnetic semiconductor Cd1-xMnxGeP2
    Medvedkin, GA
    Ishibashi, T
    Nishi, T
    Hayata, K
    Hasegawa, Y
    Sato, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (10A): : L949 - L951
  • [6] Electronic structure of magnetic semiconductors Cd1-xMnxGeAs2 and Cu1-xMnxGaTe2
    Murashov, S. V.
    Yarzhemsky, V. G.
    Nefedov, V. I.
    Murav'ev, E. N.
    RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2007, 52 (08) : 1243 - 1247
  • [7] Anomalies of magnetic properties and magnetovolume effect in Cd1-xMnxGeAs2 at hydrostatic pressure
    Mollaev, A. Yu.
    Kamilov, I. K.
    Arslanov, R. K.
    Arslanov, T. R.
    Zalibekov, U. Z.
    Novotortsev, V. M.
    Marenkin, S. F.
    Trukhan, V. M.
    APPLIED PHYSICS LETTERS, 2012, 100 (20)
  • [8] Defects in Cd1-xMnxGeAs2 lattice
    Romcevic, Maja
    Romcevic, Nebojsa
    Trajic, Jelena
    Kilanski, Lukasz
    Dobrowolski, Witold
    Fedorchenko, Irina Valentinovna
    Marenkin, Sergei Fedorovich
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 688 : 56 - 61
  • [9] High-Pressure Volume Magnetostriction in the Diluted Magnetic Semiconductor Cd1-xMnxGeAs2 (x=0.06-0.3)
    Mollaev, A. Yu.
    Kamilov, I. K.
    Arslanov, R. K.
    Novotortsev, V. M.
    Marenkin, S. F.
    Trukhan, V. M.
    Arslanov, T. R.
    Zalibekov, U. Z.
    Fedorchenko, I. V.
    INORGANIC MATERIALS, 2011, 47 (11) : 1171 - 1173
  • [10] Magnetism of chalcopyrite semiconductors:: Cd1-xMnxGeP2 -: art. no. 201202
    Zhao, YJ
    Geng, WT
    Freeman, AJ
    Oguchi, T
    PHYSICAL REVIEW B, 2001, 63 (20)
12345