COSi2 formation using Ti-capping layer

被引：2

作者：

Liu, ZQ ^{[1
]}

Feng, JY ^{[1
]}

机构：

[1] Tsinghua Univ, Key Lab Adv Mat, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 235卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

preferred orientations; atomic layer epitaxy; semiconducting silicon compounds;

D O I：

10.1016/S0022-0248(01)01761-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In order to eliminate the disadvantages of the Ti interlayer technique in forming epitaxial CoSi2 films on (100)Si substrates, a new kind of Ti-capping layer method was employed to grow CoSi2 films on (100)Si substrates. In this study, a layer of (200) textured Co film covered with a Ti-capping layer was annealed by rapid thermal annealing at different temperatures. X-ray diffraction patterns showed a (220) preferred orientation Of COSi2 and the skipping of the intermediate phase Co2Si in the Ti-capped sample. The mechanism of the formation (220) preferred CoSi2, film was discussed and uncapped samples were used as counterparts to illuminate the effects of the Ti-capping layer. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：561 / 566

页数：6

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