Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline-TiOx-Based Resistive-Switching Memory Devices

被引：3
|
作者：
Lee, Jung-Kyu [1 ,2 ]
Cho, In-Tak [1 ,2 ]
Kwon, Hyuck-In [3 ]
Hwang, Cheol Seong [4 ,5 ]
Park, Chan Hyeong [6 ]
Lee, Jong-Ho [1 ,2 ]
机构：
[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
[3] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
[4] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
[5] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea
[6] Kwangwoon Univ, Dept Elect & Commun Engn, Seoul 139701, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 07期
关键词：
Conduction mechanism; low-frequency noise (LFN); resistive switching; resistive random access memory (RRAM);
D O I：
10.1109/LED.2012.2196670
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-frequency noise (LFN) characteristics have been studied in polycrystalline-TiOx-based resistive random access memories (RRAMs). LFNs are proportional to 1/f in high-resistance state (HRS), but those in low-resistance state (LRS) are proportional to 1/f only in less than similar to 100 Hz. The normalized noise power in HRS is around three orders of magnitude higher than that in LRS. Bias dependence of 1/f noise shows that the current conduction mechanisms from noise measurements are consistent with those from the current-voltage relationships in TiOx-based unipolar RRAM devices.
引用
收藏
页码：1063 / 1065
页数：3
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