Inductively coupled plasma damage in GaN Schottky diodes

被引：8
|
作者：
Cao, XA [1 ]
Zhang, AP
Dang, GT
Cho, H
Ren, F
Pearton, SJ
Shul, RJ
Zhang, L
Hickman, R
Van Hove, JM
机构：
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[3] Sandia Natl Labs, Albuquerque, NM 87185 USA
[4] SVT Associates, Eden Prairie, MN 55344 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 04期
关键词：
D O I：
10.1116/1.590785
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of H-2 or N-2 plasma exposure on the current-voltage characteristics of GaN Schottky diodes were examined as a function of source power and rf chuck power. Under all conditions there was a strong reduction in diode reverse breakdown voltage and an increase in forward and reverse currents, The results are consistent with creation of a thin (less than or equal to 600 Angstrom) n-type conducting surface region after ion bombardment of the GaN surface. Much of the degradation in diode quality can be recovered by annealing in N-2 at 750 degrees C. (C) 1999 American Vacuum Society. [S0734-211X(99)06804-3].
引用
收藏
页码：1540 / 1544
页数：5
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