Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems

被引：4

作者：

Hays, DC ^{[1
]}

Abernathy, CR ^{[1
]}

Hobson, WS ^{[1
]}

Pearton, SJ ^{[1
]}

Han, J ^{[1
]}

Shul, RJ ^{[1
]}

Cho, H ^{[1
]}

Jung, KB ^{[1
]}

Ren, F ^{[1
]}

Hahn, YB ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING | 1999年 / 573卷

关键词：

D O I：

10.1557/PROC-573-281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Selective etching' of InN over GaN and AIN, and of GaAs over both AlGaAs and InGaP was examined with a number of different plasma chemistries under inductively coupled plasma conditions. Selectivities up to 55 for InN/GaN and 20 for InN/AlN were achieved in ICI/Ar discharges. For GaAs/AlGaAs, maximum selectivities of 75(with BCl3/SF6) were obtained while for GaAs/InGaP values of 80(with BCl3/SF6) and 25(with BCl3/NF3) were achieved. Selective etching of InGaP over GaAs is possible with either CH4/H-2 or BI3. The selectivity is a strong function of ion flux and ion energy, and can result from two factors - either formation of a nonvolatile etch product, or a difference in bond strength between the two materials.

引用

页码：281 / 286

页数：6

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