Modelling of flow and growth processes in epitaxial reactors using unstructured grids

The paper deals with the development of an unstructured grid algorithm and a flexible code for the computation of gasdynamics, heat and mass transfer in incompressible laminar gas mixture flows, and with their application to the modelling of metalorganic chemical vapor deposition (MOCVD) of epitaxial layers of GaAs and GaN. A mathematical model is based on the low Mach number form of the Navier-Stokes equations and takes into account heterogeneous reactions, buoyancy, conjugated heat transfer inside a solid body, radiative heat exchange. A finite-volume numerical algorithm and an unstructured grid generator as well as local grid refinement are described. Numerical results are presented for the low inside the MOCVD Planetary Reactor(TM) and the horizontal reactor.