Isotopic study of mid-infrared vibrational modes in GaAs related to carbon and nitrogen impurities

被引：2

作者：

Alt, H. Ch. ^{[1
]}

Wagner, H. E. ^{[1
]}

Glacki, A. ^{[2
]}

Frank-Rotsch, Ch. ^{[2
]}

Haeublein, V. ^{[3
]}

机构：

[1] Univ Appl Sci, D-80335 Munich, Germany

[2] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

[3] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2015年 / 252卷 / 08期

关键词：

defects; gallium arsenide; isotopes; local vibrational modes; GALLIUM-ARSENIDE; OXYGEN; SPECTROSCOPY; COMPLEX;

D O I：

10.1002/pssb.201552028

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Fourier transform infrared absorption measurements have been carried out on GaAs crystals doped or implanted with carbon, nitrogen and oxygen. In the presence of carbon and nitrogen, thermally stable defects occur with strong molecular-like bonding giving rise to absorption bands of vibrational character in the mid-infrared. By implantation of the nitrogen isotopes N-14 and N-15, a complex of the chemical composition CN2 is identified. This defect is the origin for the mode at 2060 cm(-1) previously attributed to a (C, O)-complex. A further absorption band at 1973 cm(-1) is tentatively attributed to the stretching mode of a CN entity. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1827 / 1831

页数：5

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