Key hot-carrier degradation model calibration and verification issues for accurate AC circuit-level reliability simulation

被引:8
|
作者
Jiang, WJ
Le, H
Dao, S
Kim, SA
Stine, B
Chung, JE
Wu, YJ
Bendix, P
Prasad, S
Kapoor, A
Kopley, TE
Dungan, T
Manna, I
Marcoux, P
Wu, LF
Chen, A
Liu, ZH
机构
来源
1997 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 35TH ANNUAL | 1997年
关键词
D O I
10.1109/RELPHY.1997.584278
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study provides necessary degradation model calibration and evaluation guidelines required to enable more consistent and effective use of hot-carrier reliability simulation tools. Benchmark results provide strong verification that the AC degradation models are generally accurate if properly calibrated; however, SPICE modeling errors, secondary physical mechanisms and statistical parameter variation are found to impact the simulated results as much as differences in the circuit design itself.
引用
收藏
页码:300 / 306
页数:7
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