Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

被引：1

作者：

Bubna, M. ^{[1
,11
,12
]}

Bortoletto, D. ^{[1
]}

Bolla, G. ^{[1
,6
]}

Shipsey, I. ^{[1
]}

Manfra, M. J. ^{[1
,11
,12
,13
]}

Khan, K. ^{[1
]}

Arndt, K. ^{[1
]}

Hinton, N. ^{[1
]}

Godshalk, A. ^{[2
]}

Kumar, A. ^{[2
]}

Menasce, D. ^{[3
]}

Moroni, L. ^{[4
,5
]}

Chramowicz, J. ^{[6
]}

Lei, C. M. ^{[6
]}

Prosser, A. ^{[6
]}

Rivera, R. ^{[6
]}

Uplegger, L. ^{[6
]}

Lo Vetere, M. ^{[7
,8
]}

Robutti, E. ^{[7
]}

Ferro, F. ^{[7
]}

Ravera, F. ^{[9
,10
]}

Costa, Marco ^{[9
,10
]}

机构：

[1] Purdue Univ, Dept Phys & Astron, W Lafayette, IN 47907 USA

[2] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[3] INFN Milano Bicocca, I-20133 Milan, Italy

[4] Univ Milano Bicocca, I-20126 Milan, Italy

[5] INFN Milano Bicocca, I-20126 Milan, Italy

[6] Fermilab Natl Accelerator Lab, Batavia, IL 60510 USA

[7] INFN Genova, I-16146 Genoa, Italy

[8] Univ Genoa, Dipartimento Fis, I-16146 Genoa, Italy

[9] Univ Torino, I-10125 Turin, Italy

[10] INFN Sez Torino, I-10125 Turin, Italy

[11] Purdue Univ, Dept Elect & Comp Engn, W Lafayette, IN 47907 USA

[12] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA

[13] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

JOURNAL OF INSTRUMENTATION | 2015年 / 10卷

关键词：

Radiation-hard detectors; Particle tracking detectors (Solid-state detectors); Instrumentation for particle accelerators and storage rings - high energy (linear accelerators; synchrotrons); CMS PIXEL DETECTOR; SILICON SENSORS; READOUT CHIP; SYSTEM;

D O I：

10.1088/1748-0221/10/08/C08002

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 x 1034 cm(-2)s(-1) and collect similar to 3000 fb(-1) of data. The innermost layer of the pixel detector will be exposed to doses of about 10(16) n(eq)/cm(2). Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 mu m to 320 mu m in p-type and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. The results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.

引用

页数：13

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