Magnetic tunneling junctions with an inserted ferromagnetic metal spacer

被引：0
|
作者：
Chen, SP [1 ]
Chang, CR [1 ]
机构：
[1] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 239卷 / 1-3期
关键词：
tunneling magnetoresistance (TMR); spin polarization;
D O I：
10.1016/S0304-8853(01)00592-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The behavior of the effective spin polarization of the tunneling electrons through an inserted ferromagnetic metal spacer can be regarded as the interference of the spin-up electrons and the spin-down electrons. Instead of using the different insulator. the enhancement of the effective spin polarization can be obtained by merely adjusting the thickness of an inserted ferromagnetic metal spacer. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：132 / 134
页数：3
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