Fabrication and Electrical Evaluation of MoSi2-Si Composite Thin Films

被引：0

作者：

Hikita, Shinya ^{[1
]}

Hayashi, Teppei ^{[1
]}

Sato, Yuuki ^{[1
]}

Yoshikado, Shinzo ^{[1
]}

机构：

[1] Doshisha Univ, Grad Sch Engn, Kyotanabe 6100321, Japan

来源：

ELECTROCERAMICS IN JAPAN XV | 2013年 / 566卷

关键词：

resistance material; MoSi2-Si composite; thin film; conduction mechanism; Hall coefficient; p-type conduction; n-type conduction; RESISTIVITY;

D O I：

10.4028/www.scientific.net/KEM.566.179

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin films of a composite of molybdenum disilicide (MoSi2) and silicon (Si) were fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi2 and Si with a Si-to-Mo molar ratio of 1:X (2.0 <= X <= 2.5). The Hall coefficients were measured to identify the conduction mechanisms in the thin films. The sign and magnitude of the Hall coefficients revealed that thin films with X = 2.0-2.2 having a hexagonal crystal structure showed p-type conduction, while the mechanism for the n-type film with X = 2.33 was unknown and that for a composite of hexagonal and an unknown structure with X = 2.3, 2.4 and 2.5 showed mixed conduction.

引用

页码：179 / 183

页数：5

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