Gate current dependent hot-carrier-induced degradation in LDMOS transistors

被引：10
|
作者：
Chen, J. F. [1 ,2 ]
Tian, K. -S. [1 ,2 ]
Chen, S. -Y. [1 ,2 ]
Lee, J. R. [1 ,2 ]
Wu, K. -M. [3 ]
Huang, T. -Y. [3 ]
Liu, C. M. [3 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[3] Taiwan Semicond Mfg Co, Hsinchu 30077, Taiwan
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 16期
关键词：
D O I：
10.1049/el:20080520
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hot-carrier- induced degradation in an n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistor is investigated. Based on experimental data and technology computer-aided-design simulations,hot- electron injection in the channel region is identified to be the driving force of device degradation. Since gate current (I-g) consists mainly of electron injection, Ig is found to correlate with device degradation well. Such Ig dependent device degradation suggests that Ig should be examined in evaluating the hot- carrier reliability of LDMOS transistors.
引用
收藏
页码：991 / 992
页数：2
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