Electronic structure and doping in BaFe2As2 and LiFeAs:: Density functional calculations

被引:382
|
作者
Singh, D. J. [1 ]
机构
[1] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
来源
PHYSICAL REVIEW B | 2008年 / 78卷 / 09期
关键词
D O I
10.1103/PhysRevB.78.094511
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report density functional calculations of the electronic structure and Fermi surface of the BaFe(2)As(2) and LiFeAs phases including doping via the virtual-crystal approximation. The results show that contrary to a rigid-band picture, the density of states at the Fermi energy is only weakly doping dependent and that the main effect of doping is a change in the relative sizes of the electron and hole Fermi surfaces as required by Luttinger's theory. This is partly a consequence of a change in As height with doping, in particular a shift of As toward Fe as holes are introduced in the Fe plane, as might be expected from simple ionic considerations. The main effect of doping is therefore a reduction in the degree of nesting of the Fermi surface. This provides a framework for understanding the approximate electron-hole symmetry in the phase diagrams of the Fe-As based superconductors.
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页数:7
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