Optical investigations of bulk and multi-quantum well nitride-based microcavities

被引:4
|
作者
Reveret, F. [1 ]
Medard, F. [1 ]
Disseix, P. [1 ]
Leymarie, J. [1 ]
Mihailovic, M. [1 ]
Vasson, A. [1 ]
Sellers, I. R. [2 ]
Semond, F. [2 ]
Leroux, M. [2 ]
Massies, J. [2 ]
机构
[1] CNRS, UMR UBP 6602, LASMEA, F-63177 Aubiere, France
[2] CRHEA CNRS, Valbonne, France
关键词
GaN; Microcavity; Strong coupling; Polaritons; Reflectivity; QUANTUM; EXCITONS;
D O I
10.1016/j.optmat.2007.10.017
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The light-matter coupling has been investigated in lambda/2 and in lambda-GaN microcavities. It is shown that the optical properties of the cavity are affected by the strong absorption in the GaN active layer when its thickness increases. Results obtained on a microcavity including GaN/AlGaN multi-quantum well (MQW) are also reported and the oscillator strengths of excitons are deduced from the fit of reflectivity spectra. Nevertheless improvement of the design and material quality of the MQW microcavity will be necessary to observe the strong coupling. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:505 / 509
页数:5
相关论文
共 50 条
  • [31] Non equilibrium Green’s function quantum transport for green multi-quantum well nitride light emitting diodes
    Akshay Shedbalkar
    Bernd Witzigmann
    Optical and Quantum Electronics, 2018, 50
  • [32] ALGAAS MULTI-QUANTUM-WELL LASERS WITH BURIED MULTI-QUANTUM WELL OPTICAL GUIDE FABRICATED BY ZN-DIFFUSION-INDUCED DISORDERING
    OHTA, T
    SEMURA, S
    KURODA, T
    NAKASHIMA, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2540 - 2541
  • [33] Ferroelectric tunnel junctions with multi-quantum well structures
    Ma, Zhijun
    Zhang, Tianjin
    Liang, Kun
    Qi, Yajun
    Wang, Duofa
    Wang, Jinzhao
    Jiang, Juan
    APPLIED PHYSICS LETTERS, 2014, 104 (22)
  • [34] Non equilibrium Green's function quantum transport for green multi-quantum well nitride light emitting diodes
    Shedbalkar, Akshay
    Witzigmann, Bernd
    OPTICAL AND QUANTUM ELECTRONICS, 2018, 50 (02)
  • [35] Localization effects in InGaAsN multi-quantum well structures
    Hoffmann, A
    Heitz, R
    Kaschner, A
    Lüttgert, T
    Born, H
    Egorov, AY
    Riechert, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 93 (1-3): : 55 - 59
  • [36] Modeling of the linewidth enhancement factor in multi-quantum well InGaAsP based lasers
    Hybertsen, MS
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES V, 1997, 2994 : 747 - 757
  • [37] Theory of InGaN multi-quantum well laser diodes
    Zegrya, GG
    IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, 1997, 3001 : 117 - 127
  • [38] Analysis of defect states in optical microcavities based on the photonic quantum well structure
    Shi, Lingyun
    Xu, Shaohui
    Xiong, Dayuan
    Wang, Lianwei
    Yang, Pingxiong
    Chu, Paul K.
    OPTICS COMMUNICATIONS, 2020, 458
  • [39] Dilute Nitride Multi-Quantum Well Multi-Junction Design: A Route to Ultra-efficient Photovoltaic Devices
    Vijaya, Gopi Krishna
    Alemu, Andenet
    Freundlich, Alex
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XIX, 2011, 7933
  • [40] Multi-quantum well emission from blue InGaN-based laser
    Schillgalies, M.
    Laubsch, A.
    Sabathil, M.
    Avramescu, A.
    Lutgen, S.
    Strauss, U.
    2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2008, : 95 - 96