Tertiarybutylhydrazine:: a new precursor for the MOVPE of Group III-nitrides

被引：17
|
作者：
Pohl, UW
Möller, C
Knorr, K
Richter, W
Gottfriedsen, J
Schumann, H
Rademann, K
Fielicke, A
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Tech Univ Berlin, Inst Anorgan & Analyt Chem, D-10623 Berlin, Germany
[3] Humboldt Univ, Inst Phys & Theoret Chem, D-10117 Berlin, Germany
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 59卷 / 1-3期
关键词：
GaN; MOVPE; tertiarybutylhydrazine;
D O I：
10.1016/S0921-5107(98)00406-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tertiarybutylhydrazine (tBuHy), generated from tBuMy hydrocloride, was found to have a convenient vapor pressure (6.7 mbar at 20 degrees C) for MOVPE applications. Thermolysis of tBuHy, studied by quadrupole mass spectroscopy (QMS), starts at about 220 degrees C by homolytic cleavage into reactive tBuNH and NH, radicals. Almost complete decomposition under QMS conditions is observed above 350 degrees C. Mirror-like GaN epilayers with mixed cubic/hexagonal and hexagonal structure were grown on GaAs and Al2O3 substrates, respectively, at 670 degrees C using tBuHy and Me3Ga or Et,Ga with a V/III ratio of 70. Low carbon incorporation was found in tBuHy-grown layers with respect to layers grown with Me(2)Hy under the same conditions. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：20 / 23
页数：4
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