Tertiarybutylhydrazine:: a new precursor for the MOVPE of Group III-nitrides

被引：17

作者：

Pohl, UW

Möller, C

Knorr, K

Richter, W

Gottfriedsen, J

Schumann, H

Rademann, K

Fielicke, A

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Tech Univ Berlin, Inst Anorgan & Analyt Chem, D-10623 Berlin, Germany

[3] Humboldt Univ, Inst Phys & Theoret Chem, D-10117 Berlin, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 59卷 / 1-3期

关键词：

GaN; MOVPE; tertiarybutylhydrazine;

D O I：

10.1016/S0921-5107(98)00406-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tertiarybutylhydrazine (tBuHy), generated from tBuMy hydrocloride, was found to have a convenient vapor pressure (6.7 mbar at 20 degrees C) for MOVPE applications. Thermolysis of tBuHy, studied by quadrupole mass spectroscopy (QMS), starts at about 220 degrees C by homolytic cleavage into reactive tBuNH and NH, radicals. Almost complete decomposition under QMS conditions is observed above 350 degrees C. Mirror-like GaN epilayers with mixed cubic/hexagonal and hexagonal structure were grown on GaAs and Al2O3 substrates, respectively, at 670 degrees C using tBuHy and Me3Ga or Et,Ga with a V/III ratio of 70. Low carbon incorporation was found in tBuHy-grown layers with respect to layers grown with Me(2)Hy under the same conditions. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：20 / 23

页数：4

共 50 条

[1] Nucleation control in MOVPE of group III-nitrides on SiC substrate
Nishida, T
Kobayashi, N
JOURNAL OF CRYSTAL GROWTH, 2000, 221 (1-4) : 297 - 300
[2] Observation of growth during the MOVPE of III-nitrides
Hardtdegen, H
Kaluza, N
Steins, R
Cho, YS
Schmidt, R
Sofer, Z
Zettler, JT
JOURNAL DE PHYSIQUE IV, 2006, 132 : 177 - 183
[3] Group III-Nitrides Nanostructures
Perez-Caro, M.
Ramirez-Lopez, M.
Rojas-Ramirez, J. S.
Martinez-Velis, I.
Casallas-Moreno, Y.
Gallardo-Hernandez, S.
Babu, B. J.
Velumani, S.
Lopez-Lopez, M.
ADVANCED SUMMER SCHOOL IN PHYSICS 2011 (EAV 2011), 2012, 1420 : 164 - 168
[4] In situ monitoring of periodic structures during MOVPE of III-nitrides
Simbrunner, C.
Kharchenko, A.
Navarro-Quezada, A.
Wegscheider, M.
Quast, M.
Li, Tian
Bonanni, A.
Bethke, J.
Lischka, K.
Sitter, H.
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) : 1607 - 1613
[5] Magnetic resonance investigations on group III-nitrides
Meyer, BK
GALLIUM NITRIDE (GAN) II, 1999, 57 : 371 - 406
[6] Doping sources for growth of group III-nitrides
Abernathy, CR
Groshens, T
Gedridge, RW
PROCEEDINGS OF THE FIRST SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES, 1996, 96 (11): : 58 - 68
[7] Dry and wet etching for group III-nitrides
Adesida, I
Youtsey, C
Ping, AT
Khan, F
Romano, LT
Bulman, G
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
[8] Defects and defect identification in group III-nitrides
Meyer, BK
Hofmann, DM
Alves, H
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 71 : 69 - 76
[9] A new "three-step method" for high quality MOVPE growth of III-nitrides on sapphire
Yoshikawa, A
Takahashi, K
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (02): : 625 - 628
[10] Theory of surfaces and interfaces of group III-nitrides
Neugebauer, J
Zywietz, T
Scheffler, M
Northrup, J
APPLIED SURFACE SCIENCE, 2000, 159 : 355 - 359

← 1 2 3 4 5 →