Design and realization of a C-band 2kW GaN power amplifier module

被引：0
|
作者：
Zhang Haibing [1 ]
Xu Xiaofan [1 ]
Kuang Xiaole [1 ]
Zhu Weitao [1 ]
机构：
[1] 724 Res Inst CSIC, Nanjing, Jiangsu, Peoples R China
来源：
2016 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS) | 2016年
关键词：
GaN power amplifier module; power combiner/divider; PAE (power-added-efficiency); power supply modulation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 2kW power amplifier module is described in this paper. It is designed to operate at C band, pulse width of 500 mu s, and duty cycle of 30%. The module has been physically implemented and achieved a high PAE of 30%, 63dBm output power and associated gain of 63dB. The main devices of this module are GaN HEMT power transistors working at class AB made in China. The output power of each transistor is more than 200 watts. In this paper, the main properties and key technologies of the GaN power amplifier module are presented.
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页数：4
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