Raman scattering with near infrared excitation selectively resonant with the indirect bandgap of bulk MoSe2

被引：0

作者：

Sotgiu, Simone ^{[1
]}

Venanzi, Tommaso ^{[1
]}

Macheda, Francesco ^{[2
,3
]}

Stellino, Elena ^{[4
]}

Postorino, Paolo ^{[1
]}

Ortolani, Michele ^{[1
]}

Baldassarre, Leonetta ^{[1
]}

机构：

[1] Univ Rome Sapienza, Phys Dept, I-00185 Rome, Italy

[2] Ist Italiano Tecnol, Graphene Labs, I-16163 Genoa, Italy

[3] Ist Italiano Tecnol, Ctr Life Nano & Neurosci, I-00161 Rome, Italy

[4] Univ Perugia, Dept Phys & Geol, Via Alessandro Pascoli, Perugia, Italy

来源：

2022 47TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ 2022) | 2022年

关键词：

D O I：

10.1109/IRMMW-THz50927.2022.9895730

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resonance Raman scattering has proven extremely useful for the study of two-dimensional materials, as it provides information on both the electronic and vibrational excitations and on the coupling among them. Here we show that by employing infrared excitation energy we can identify the Raman resonance processes in MoSe2 crystals, obtaining information on phonon modes away from Gamma point.

引用

页数：2

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